Polycrystalline diamond tables and compacts and related methods

ABSTRACT

In an embodiment, a polycrystalline diamond table includes a plurality of bonded diamond grains and a plurality of interstitial regions defined by the plurality of bonded diamond grains. The polycrystalline diamond table may be at least partially leached such that at least a portion of at least one interstitial constituent has been removed from at least a portion of the plurality of interstitial regions by exposure to a leaching agent. The leaching agent may include a mixture having a ratio of weight % hydrofluoric acid to weight % nitric acid of about 1.0 to about 2.4, and water in a concentration of about 50 weight % to about 85 weight %. Various other materials, articles, and methods are also disclosed.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.16/238,454 titled “AQUEOUS LEACHING SOLUTIONS AND METHODS OF LEACHING ATLEAST ONE INTERSTITIAL CONSTITUENT FROM A POLYCRYSTALLINE DIAMOND BODYUSING THE SAME” and filed 2 Jan. 2019, which is a continuation of U.S.patent application Ser. No. 15/065,246 titled “AQUEOUS LEACHINGSOLUTIONS AND METHODS OF LEACHING AT LEAST ONE INTERSTITIAL CONSTITUENTFROM A POLYCRYSTALLINE DIAMOND BODY USING THE SAME” and filed 9 Mar.2016, which claims priority to U.S. Provisional Application No.62/135,438 filed on 19 Mar. 2015, the disclosure of each of which ishereby incorporated by reference in its entirety.

BACKGROUND

Wear-resistant, superabrasive compacts are utilized in a variety ofmechanical applications. For example, polycrystalline diamond compacts(“PDCs”) are used in drilling tools (e.g., cutting elements, gagetrimmers, etc.), machining equipment, bearing apparatuses, wire-drawingmachinery, and in other mechanical apparatuses.

PDCs have found particular utility as superabrasive cutting elements inrotary drill bits, such as roller cone drill bits and fixed cutter drillbits. A PDC cutting element typically includes a superabrasive diamondlayer (also known as a diamond table). The diamond table is formed andbonded to a substrate using an ultra-high pressure, ultra-hightemperature (“HPHT”) process. The PDC cutting element may also be brazeddirectly into a preformed pocket, socket, or other receptacle formed inthe bit body. The substrate may be often brazed or otherwise joined toan attachment member, such as a cylindrical backing. A rotary drill bittypically includes a number of PDC cutting elements affixed to the bitbody. It is also known that a stud carrying the PDC may be used as a PDCcutting element when mounted to a bit body of a rotary drill bit bypress-fitting, brazing, or otherwise securing the stud into a receptacleformed in the bit body.

Conventional PDCs are normally fabricated by placing a cemented-carbidesubstrate into a container or cartridge with a volume of diamondparticles positioned adjacent to a surface of the cemented-carbidesubstrate. A number of such cartridges may be loaded into an HPHT press.The substrates and volume of diamond particles are then processed underHPHT conditions in the presence of a catalyst that causes the diamondparticles to bond to one another to form a matrix of bonded diamondgrains defining a polycrystalline diamond (“PCD”) table. The catalyst isoften a metal-solvent catalyst, such as cobalt, nickel, iron, or alloysthereof that is used for promoting intergrowth of the diamond particles.

In one conventional approach for forming a PDC, a constituent of thecemented-carbide substrate, such as cobalt from a cobalt-cementedtungsten carbide substrate, liquefies and sweeps from a region adjacentto the volume of diamond particles into interstitial regions between thediamond particles during the HPHT process. The cobalt acts as ametal-solvent catalyst to promote intergrowth between the diamondparticles, which results in formation of bonded diamond grains. Ametal-solvent catalyst may be mixed with the diamond particles prior tosubjecting the diamond particles and substrate to the HPHT process.

The presence of the metal-solvent catalyst and/or other materials in thePCD table may reduce the thermal stability of the PCD table at elevatedtemperatures. For example, the difference in thermal expansioncoefficient between the diamond grains and the metal-solvent catalyst isbelieved to lead to chipping or cracking in the PCD table duringdrilling or cutting operations. The chipping or cracking in the PCDtable may degrade the mechanical properties of the cutting element orlead to failure of the cutting element. Additionally, at hightemperatures, diamond grains may undergo a chemical breakdown orback-conversion with the metal-solvent catalyst. Further, portions ofdiamond grains may transform to carbon monoxide, carbon dioxide,graphite, or combinations thereof, thereby degrading the mechanicalproperties of the PCD material.

Accordingly, the metal-solvent catalyst may be removed from the PCDtable in situations when the PCD table may be exposed to hightemperatures. Chemical leaching is often used to dissolve and removevarious materials from the PCD table. For example, chemical leaching maybe used to remove metal-solvent catalysts, such as cobalt, from one ormore regions of a PCD table that may experience elevated temperaturesduring drilling, such as regions adjacent to the working surfaces of thePCD table.

SUMMARY

Embodiments of the invention relate to aqueous leaching agents andmethods of at least partially removing at least one interstitialconstituent (e.g., a catalyst or a metallic infiltrant) from a PCD bodyusing such aqueous leaching agents. The leaching agent may include amixture having hydrofluoric acid, nitric acid, and water, with themixture exhibiting a relatively low viscosity. Removing the at least oneinterstitial constituent using the leaching agent including the mixtureunexpectedly removes the at least one interstitial constituent from thePCD table more rapidly and more effectively than conventional leachingagents.

In an embodiment, a method of fabricating an at least partially leachedPCD table is disclosed. The method includes providing a PCD table. ThePCD table includes a plurality of bonded diamond grains defining aplurality of interstitial regions at least a portion of which include atleast one interstitial constituent disposed therein. The method furtherincludes leaching the PCD table with a leaching agent to remove at leasta portion of the at least one interstitial constituent from the PCDtable. The leaching agent includes a mixture having hydrofluoric acid ina first concentration of about 10 weight % to about 50 weight %, nitricacid in a second concentration of about 5 weight % to about 25 weight %,and water in a third concentration of about 25 weight % to about 85weight %. In an embodiment, the at least partially leached PCD table isfurther bonded to a substrate in a second HPHT process.

In an embodiment, a method of fabricating a PDC is disclosed. The methodincludes providing a PCD table including an interfacial surface bondedto a substrate and an opposing upper surface. The PCD table includes aplurality of bonded diamond grains defining a plurality of interstitialregions at least a portion of which include at least one interstitialconstituent disposed therein. The method further includes leaching thePCD table with a leaching agent to remove at least a portion of the atleast one interstitial constituent from the PCD table. The leachingagent includes a mixture having hydrofluoric acid in a firstconcentration of about 10 weight % to about 50 weight %, nitric acid ina second concentration of about 5 weight % to about 25 weight %, andwater in a third concentration of about 25 weight % to about 85 weight%.

In an embodiment, a method of fabricating a PDC includes providing a PCDtable including an interfacial surface bonded to a substrate and anopposing upper surface. The PCD table includes a plurality of bondeddiamond grains defining a plurality of interstitial regions at least aportion of which include at least one interstitial constituent disposedtherein. The method further includes leaching the PCD table with aleaching agent to remove at least a portion of the at least oneinterstitial constituent from the PCD table. The leaching agent includesa mixture having hydrofluoric acid and nitric acid. The leaching agentexhibits a viscosity of less than about 0.55 centipoise.

In another embodiment, an aqueous leaching solution for use in leachingat least one interstitial constituent from PCD includes hydrofluoricacid in a first concentration of about 10 weight % to about 50 weight %,nitric acid in a second concentration of about 5 weight % to about 25weight %, and water in a third concentration of about 25 weight % toabout 85 weight %.

Features of any of the disclosed embodiments may be used in combinationwith one another, without limitation. In addition, other features andadvantages of the present disclosure will become apparent to those ofordinary skill in the art through consideration of the followingdetailed description and the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The drawings illustrate several embodiments of the invention, whereinidentical reference numerals refer to identical or similar elements orfeatures in different views or embodiments shown in the drawings.

FIG. 1A is a schematic illustration of a method of fabricating a PDCaccording to an embodiment.

FIGS. 1B and 1C are cross-sectional views illustrating different stagesin a method of leaching a PCD table of the PDC formed in FIG. 1A using aleaching agent that includes a mixture having hydrofluoric acid, nitricacid, and water according to an embodiment.

FIGS. 2A-2D are cross-sectional views illustrating different stages in amethod of fabricating a PDC in which a leaching agent that includes amixture having hydrofluoric acid, nitric acid, and water is used toleach the PCD table according to an embodiment.

FIGS. 3A and 3B are cross-sectional views illustrating different stagesin a method of removing leaching by-products from a PCD table accordingto an embodiment.

FIG. 4 is an isometric view of a rotary drill bit according to anembodiment that may employ one or more of the PDCs fabricated accordingto any of the embodiments disclosed herein.

FIG. 5 is a top elevation view of the rotary drill bit shown in FIG. 4 .

FIG. 6 is an isometric cut-away view of a thrust-bearing apparatusaccording to an embodiment, which may utilize any of the disclosed PDCfabricated according to any of the embodiments disclosed herein asbearing elements.

FIG. 7 is an isometric cut-away view of a radial bearing apparatusaccording to an embodiment, which may utilize any of the disclosed PDCfabricated according to any of the embodiments disclosed herein asbearing elements.

DETAILED DESCRIPTION

Embodiments of the invention relate to methods of fabricating PCD bodiesand PDCs in which a leaching agent (i.e., aqueous leaching solution)including a relatively low viscosity mixture having hydrofluoric acid,nitric acid, and water is used to remove at least one interstitialconstituent (e.g., a catalyst and/or a metallic infiltrant) from atleast a portion of a PCD body to form an at least partially porous PCDbody, resultant PCD bodies and PDCs, and applications for such PCDbodies and PDCs. The leaching agent including the disclosed lowviscosity mixtures may provide more rapid and effective removal of theat least one interstitial constituent from a PCD body than conventionalacid leaching.

The inventors currently believe that the at least one interstitialconstituent is more rapidly and effectively removed from a PCD bodybecause the leaching agents disclosed herein exhibit a relatively lowviscosity that may improve diffusion of the leaching agent into andthrough the interstitial regions of the PCD body and diffusion of theleaching agent, including the at least one interstitial constituentdissolved therein, from the interstitial regions of the PCD body. Theinventors currently believe that the disclosed leaching agents exhibitan unexpectedly rapid and effective removal of the at least oneinterstitial constituent from the PCD body because the leaching agentsexhibit a relatively low viscosity caused by a relatively highconcentration of hydrofluoric acid compared to the concentration ofnitric acid, while still including sufficient nitric acid to remove atleast one interstitial constituent from the PCD body without significantreaction with a masking material that masks the PCD body duringleaching.

FIGS. 1A-1C illustrate different stages in a method of fabricating a PDC100 according to an embodiment. The method includes placing a mass ofdiamond particles 102 adjacent to a substrate 106 to form an assembly107 and subjecting the assembly 107 to an HPHT process. During the HPHTprocess, a catalyst may infiltrate the mass of diamond particles 102 tofacilitate intergrowth between the mass of diamond particles 102 andform a PCD table 108 including directly bonded-together diamond grainsdefining a plurality of interstitial regions at least partially occupiedby at least one interstitial constituent (e.g., catalyst and/or metallicinfiltrant). The at least one interstitial constituent may be removedfrom the PCD table 108 by exposing the PCD table 108 to a leaching agentthat includes a mixture having hydrofluoric acid, nitric acid, and waterexhibiting a relatively low viscosity. The leaching agent including themixture may provide more rapid and effective removal of the at least oneinterstitial constituent from the PCD table 108 than conventionalleaching.

FIG. 1A is a schematic illustration of an embodiment of a method forfabricating a PDC 100. Referring to FIG. 1A, the mass of diamondparticles 102 may be positioned adjacent to an interfacial surface 104of a substrate 106 to form an assembly 107. The mass of diamondparticles 102 may exhibit, for example, an average particle size betweenabout 0.5 μm to about 150 μm (e.g., about 50 μm or less, about 30 μm orless, about 20 μm or less, about 10 μm to about 18 μm, or about 15 μm toabout 18 μm). The diamond particle size distribution of the mass ofdiamond particles 102 may exhibit a single mode, or may exhibit abimodal or greater grain size distribution. In an embodiment, the massof diamond particles 102 may include a relatively larger size and atleast one relatively smaller size. As used herein, the phrases“relatively larger” and “relatively smaller” refer to particle sizesdetermined by any suitable method, which differ by at least a factor oftwo (e.g., 40 μm and 20 μm). In various embodiments, the mass of diamondparticles 102 may include a portion exhibiting a relatively larger size(e.g., 100 μm, 90 μm, 80 μm, 70 μm, 60 μm, 50 μm, 40 μm, 30 μm, 20 μm,15 μm, 12 μm, 10 μm, 8 μm) and another portion exhibiting at least onerelatively smaller size (e.g., 30 μm, 20 μm, 10 μm, 15 μm, 12 μm, 10 μm,8 μm, 4 μm, 2 μm, 1 μm, 0.5 μm, less than 0.5 μm, 0.1 μm, less than 0.1μm). In an embodiment, the mass of diamond particles 102 may include aportion exhibiting a relatively larger size of about 15 μm to about 40μm and another portion exhibiting a relatively smaller size of about 2μm and about 12 μm. Of course, the mass of diamond particles 102 mayalso include three or more different sizes (e.g., one relatively largersize and two or more relatively smaller sizes), without limitation.

In an embodiment, the substrate 106 may comprise a cobalt-cementedtungsten carbide substrate from which cobalt and/or a cobalt alloyinfiltrates into the mass of diamond particles 102. In anotherembodiment, the substrate 106 may be formed from another suitablematerial including, without limitation, cemented carbides includingtitanium carbide, niobium carbide, tantalum carbide, vanadium carbide,and combinations of any of the preceding carbides cemented with iron,nickel, cobalt, or alloys thereof. However, in other embodiments, thesubstrate 106 may be replaced with a metal-solvent catalyst (e.g.,cobalt, iron, nickel, or alloys thereof) or carbonate catalyst (e.g.,one or more alkali earth carbonates or alkaline earth carbonates) discand/or catalyst particles may be mixed with the mass of diamondparticles 102.

In order to effectively HPHT sinter the mass of diamond particles 102,the assembly 107 may be placed in a pressure transmitting medium, suchas a refractory metal can, graphite structure, pyrophyllite or otherpressure transmitting structure, combinations thereof, or anothersuitable container or supporting element. The pressure transmittingmedium, including the assembly 107, may be subjected to an HPHT processat a temperature of at least about 1000° C. (e.g., about 1100° C. toabout 2200° C., or about 1200° C. to about 1450° C.) and a pressure inthe pressure transmitting medium of at least about 5 GPa (e.g., at leastabout 7.5 GPa, at least about 9.0 GPa, at least about 10.0 GPa, at leastabout 11.0 GPa, at least about 12.0 GPa, at least about 14.0, or about7.5 GPa to about 9.0 GPa) for a time sufficient to sinter the diamondparticles 102 and form a PCD table 108 bonded to the substrate 106thereby forming the PDC 100.

During the HPHT process, the presence of the catalyst facilitatesintergrowth between the mass of diamond particles 102 and forms the PCDtable 108 including directly bonded-together diamond grains (e.g.,exhibiting sp3 bonding) defining a plurality of interstitial regions. Inthe illustrated embodiment, the PDC 100 may be formed by sintering themass of diamond particles 102 on the substrate 106, which may be acobalt-cemented tungsten carbide substrate from which cobalt and/or acobalt alloy liquefies during the HPHT process and infiltrates into themass of diamond particles 102 to thereby catalyze formation of the PCDtable 108. In such an embodiment, some tungsten and tungsten carbide(i.e., metallic infiltrants) from the substrate 106 may dissolve in orotherwise transfer with the catalyst. Additionally, the catalyst and themetallic infiltrants may react with the mass of diamond particles 102 toform carbides. As such, the interstitial regions of the PCD table 108may be at least partially occupied by at least one interstitialconstituent (e.g., at least one of a metal-solvent catalyst, a metallicinfiltrant, or one or more formed carbides).

The formed PCD table 108 may include an interfacial surface 110 bondedto the interfacial surface 104 of the substrate 106 and an opposingupper surface 112. The PCD table 108 may include at least one lateralsurface 114 extending between the interfacial surface 110 and the uppersurface 112. In an embodiment, the sintered diamond grains of the PCDtable 108 may exhibit an average grain size of about 20 μm of less.

Examples of suitable HPHT sintering process conditions that may be usedto practice any of the embodiments disclosed herein and form PDCs andother PCD bodies are disclosed in U.S. Pat. No. 7,866,418 which isincorporated herein, in its entirety, by this reference.

After the HPHT process, the PDC 100 may be subsequently shaped toprovide a peripherally-extending chamfer 116. Further, as shown in FIG.1B, the PCD table 108 may be at least partially leached to remove atleast a portion of the at least one interstitial constituent therefrom.In an embodiment, the PDC 100 may be at least partially immersed inand/or exposed to any of the leaching agents disclosed herein to atleast partially leach the at least one interstitial constituent from thePCD table 108. Removing at least a portion of the at least oneinterstitial constituent from the PCD table 108 may improve the wearresistance of the PCD table 108, the heat resistance of the PCD table108, the thermal stability of the PCD table 108, or combinations thereofparticularly in situations where the PCD table 108 may be exposed toelevated temperatures.

In an embodiment, the PCD table 108 may be leached to remove at least aportion of the at least one interstitial constituent therefrom using anyof the leaching agents disclosed herein that includes a mixture ofhydrofluoric acid, nitric acid, and water. The at least one interstitialconstituent may mostly include a catalyst, such as cobalt, iron, nickel,alloys thereof, combinations thereof, or other metal-solvent catalysts,with lesser amounts of a metallic material (e.g., one or more of ametallic infiltrant, tungsten, or tungsten carbide) and a variety ofother carbides (e.g., cobalt carbides). In such an embodiment, thenitric acid may promote dissolution of the cobalt, while thehydrofluoric acid may promote dissolution of the remaining interstitialmaterials. The inventors found that the at least one interstitialconstituent is more rapidly and effectively removed from the PCD table108 using a mixture having a relatively high concentration ofhydrofluoric acid compared to nitric acid. The result was unexpectedbecause the inventors expected that the at least one interstitialconstituent would be more rapidly and effectively removed from the PCDtable 108 if the leaching agent included a relatively high concentrationof nitric acid, which is a stronger acid than hydrofluoric acid. Theinventors currently believe that the at least one interstitialconstituent is more rapidly and effectively removed from the PCD table108 because the leaching agent exhibits a relatively low viscosity,which may improve diffusion of the leaching agent into and through theinterstitial regions of the PCD table 108 and diffusion of the leachingagent, including the at least one interstitial constituent dissolvedtherein, from the interstitial regions of the PCD table 108. Theinventors currently believe that the mixtures for the leaching agentsexhibit an unexpectedly rapid and effective removal of the at least oneinterstitial constituent from the PCD table 108 because the mixturesexhibit a low viscosity caused by the relatively high concentration ofhydrofluoric acid, while still including sufficient nitric acid toremove the metal-solvent catalyst from the PCD table 108. Additionally,the inventors currently believe that a relatively lower amount of nitricacid increases the useful life of masking materials and equipment thatis exposed to the acid that may mask and/or hold the PDC 100 duringleaching because nitric acid tends to react with (e.g., oxidize) thepolymeric materials commonly used for the leaching cups.

The leaching agent including a mixture having hydrofluoric acid, nitricacid, and water may have a range of concentrations that exhibitunexpectedly rapid and effective removal of the at least oneinterstitial constituent and exhibit a relatively low viscosity. In anyof the embodiments disclosed herein, the mixture may include onlyhydrofluoric acid, nitric acid, and water. However, in any of theembodiments disclosed herein, the mixture may include one or moreadditional constituents besides hydrofluoric acid, nitric acid, andwater selected and composed to reduce the viscosity of the mixture. Theone or more additional constituents may reduce the concentration of atleast one of hydrofluoric acid, nitric acid, or water in any of theembodiments disclosed herein. For example, the one or more additionalconstituents may include acetonitrile.

In an embodiment, the composition of the low viscosity mixture includeshydrofluoric acid having a first concentration of about 10 weight % toabout 50 weight %, nitric acid having a second concentration of about 5weight % to about 25 weight % nitric acid, and water having a thirdconcentration of about 25 weight % to about 85 weight %. In anotherembodiment, the first concentration of hydrofluoric acid is about 15weight % to about 25 weight % and the second concentration of nitricacid is about 10 weight % to about 20 weight %. In another embodiment,the average viscosity of the mixture may be decreased if the compositionof the mixture includes nitric acid in a second concentration of about10 weight % to about 20 weight %. In another embodiment, the averageviscosity of the mixture may be decreased if the composition of themixture includes water in a third concentration of about 30 weight % toabout 80 weight % and, in particular, about 40 weight % to about 80weight %.

In another embodiment, the average viscosity of the mixture may bedecreased if the composition of the mixture includes hydrofluoric acidin a first concentration of about 22 weight % to about 30 weight %,nitric acid having a second concentration of about 10 weight % to about20 weight %, and water having a third concentration of about 50 weight %to about 68 weight %. In another embodiment, the mixture may includehydrofluoric acid in a first concentration of about 25 weight % to about30 weight %, nitric acid having a second concentration of about 10weight % to about 15 weight %, and water having a third concentration ofabout 55 weight % to about 65 weight %. In another embodiment, themixture may include hydrofluoric acid in a first concentration of about25 weight % to about 30 weight %, nitric acid having a secondconcentration of about 10 weight % to about 20 weight %, and waterhaving a third concentration of about 55 weight % to about 65 weight %.In another embodiment, the mixture may include hydrofluoric acid havinga first concentration of about 26 weight %, nitric acid having a secondconcentration of about 11 weight %, and water having a thirdconcentration of about 63 weight %. In another embodiment, the mixturemay include hydrofluoric acid having a first concentration of about 26weight %, nitric acid having a second concentration of about 14 weight%, and water having a third concentration of about 60 weight %. Inanother embodiment, the mixture may include hydrofluoric acid having afirst concentration of about 27 weight %, nitric acid having a secondconcentration of about 13 weight %, and water having a thirdconcentration of about 60 weight %. In another embodiment, the mixturemay include hydrofluoric acid having a first concentration of about 27weight %, nitric acid having a second concentration of about 17 weight%, and water having a third concentration of about 56 weight %. Inanother embodiment, the mixture may include hydrofluoric acid having afirst concentration of about 28 weight %, nitric acid having a secondconcentration of about 12 weight %, and water having a thirdconcentration of about 60 weight %.

In another embodiment, the average viscosity of the mixture may bedecreased if the composition of the mixture includes hydrofluoric acidin a first concentration of about 10 weight % to about 20 weight %,nitric acid having a second concentration of about 5 weight % to about25 weight %, and water having a third concentration of about 57 weight %to about 86 weight %. In another embodiment, the mixture may includehydrofluoric acid in a first concentration of about 12 weight % to about18 weight %, nitric acid having a second concentration of about 10weight % to about 25 weight %, and water having a third concentration ofabout 57 weight % to about 78 weight %. In another embodiment, themixture may include hydrofluoric acid in a first concentration of about13 weight % to about 16 weight %, nitric acid having a secondconcentration of about 10 weight % to about 20 weight %, and waterhaving a third concentration of about 64 weight % to about 78 weight %.In another embodiment, the mixture may include hydrofluoric acid havinga first concentration of about 14 weight %, nitric acid having a secondconcentration of about 7 weight %, and water having a thirdconcentration of about 79 weight %. In another embodiment, the mixturemay include hydrofluoric acid having a first concentration of about 14weight %, nitric acid having a second concentration of about 11 weight%, and water having a third concentration of about 75 weight %. Inanother embodiment, the mixture may include hydrofluoric acid having afirst concentration of about 14 weight %, nitric acid having a secondconcentration of about 14 weight %, and water having a thirdconcentration of about 72 weight %. In another embodiment, the mixturemay include hydrofluoric acid having a first concentration of about 15weight %, nitric acid having a second concentration of about 11 weight%, and water having a third concentration of about 74 weight %. Inanother embodiment, the mixture may include hydrofluoric acid having afirst concentration of about 15 weight %, nitric acid having a secondconcentration of about 14 weight %, and water having a thirdconcentration of about 71 weight %. In another embodiment, the mixturemay include hydrofluoric acid having a first concentration of about 15weight %, nitric acid having a second concentration of about 17 weight%, and water having a third concentration of about 68 weight %. Inanother embodiment, the mixture may include hydrofluoric acid having afirst concentration of about 15 weight %, nitric acid having a secondconcentration of about 18 weight %, and water having a thirdconcentration of about 67 weight %. In another embodiment, the mixturemay include hydrofluoric acid having a first concentration of about 15weight %, nitric acid having a second concentration of about 22 weight%, and water having a third concentration of about 63 weight %. Inanother embodiment, the mixture may include hydrofluoric acid having afirst concentration of about 16 weight %, nitric acid having a secondconcentration of about 23 weight %, and water having a thirdconcentration of about 61 weight %.

In another embodiment, the average viscosity of the mixture may bedecreased if the composition of the mixture includes hydrofluoric acidin a first concentration of about 30 weight % to about 40 weight %,nitric acid having a second concentration of about 10 weight % to about20 weight %, and water having a third concentration of about 40 weight %to about 60 weight %. In another embodiment, the mixture may includehydrofluoric acid in a first concentration of about 32 weight % to about40 weight %, nitric acid having a second concentration of about 10weight % to about 17 weight %, and water having a third concentration ofabout 43 weight % to about 58 weight %. In another embodiment, themixture may include hydrofluoric acid having a first concentration ofabout 33 weight %, nitric acid having a second concentration of about 15weight %, and water having a third concentration of about 52 weight %.In another embodiment, the mixture may include hydrofluoric acid havinga first concentration of about 37 weight %, nitric acid having a secondconcentration of about 16 weight %, and water having a thirdconcentration of about 47 weight %. In another embodiment, the mixturemay include hydrofluoric acid having a first concentration of about 37weight %, nitric acid having a second concentration of about 14 weight%, and water having a third concentration of about 49 weight %. Inanother embodiment, the mixture may include hydrofluoric acid having afirst concentration of about 38 weight %, nitric acid having a secondconcentration of about 14 weight %, and water having a thirdconcentration of about 48 weight %. In another embodiment, the mixturemay include hydrofluoric acid having a first concentration of about 39weight %, nitric acid having a second concentration of about 11 weight%, and water having a third concentration of about 50 weight %.

In another embodiment, a leaching agent exhibiting unexpectedly rapidand effective removal of the at least one interstitial constituent fromthe PCD table 108 may include at least one acid, and the leaching agentmay have a viscosity less than about 0.55 centipoise (“cP”) and, moreparticularly, less than about 0.5 cP at about 75° C. (e.g., about 0.25cP to about 0.4 cP at about 75° C.). For example, the leaching agent mayinclude a mixture having hydrofluoric acid, nitric acid, and water, andthe leaching agent may exhibit a viscosity less than about 0.55 cP atabout 75° C. For example, a mixture having a first concentration ofhydrofluoric acid of about 28 weight %, a second concentration of nitricacid of about 12 weight %, and a third concentration of water of about60 weight % may have a viscosity of about 0.45 cP at about 75° C.

In another embodiment, a leaching agent having an unexpectedly rapid andeffective removal of the at least one interstitial constituent from thePCD table 108 may include a mixture having hydrofluoric acid, nitricacid, and water exhibiting a ratio of weight % hydrofluoric acid toweight % nitric acid of about 1.0 or greater, such as about 1.2 orgreater, or about 1.5 or greater. A mixture having a ratio of weight %hydrofluoric acid to weight % nitric acid of about 1.0 or greater mayexhibit a relatively low viscosity. Similarly, the mixture may exhibit aratio of weight % hydrofluoric acid to weight % nitric acid of about 9or less (e.g., about 1.0 to about 9, about 1.2 to about 9, or about 1.5to about 9), such as about 4 or less (e.g., about 1.0 to about 4, about1.2 to about 4, or about 1.5 to about 4), or about 2 or less (e.g.,about 1.0 to about 2, about 1.2 to about 2, or about 1.5 to about 2).For example, a mixture having a ratio of weight % hydrofluoric acid toweight % nitric acid of about 9 or less may have sufficient nitric acidto remove the at least one interstitial constituent from the PCD table108.

In another embodiment, a leaching agent having an unexpectedly rapid andeffective removal of the at least one interstitial constituent from thePCD table 108 may include a mixture having hydrofluoric acid in a firstconcentration greater than about 15 weight %, nitric acid in a secondconcentration less than about 20 weight %, and a viscosity less thanabout 0.5 cP. In another embodiment, the mixture may includehydrofluoric acid having a first concentration greater than about 20weight %, nitric acid in a second concentration less than about 20weight %, and a viscosity less than about 0.4. In another embodiment,the mixture may include hydrofluoric acid having a first concentrationgreater than about 10 weight %, nitric acid in a second concentration ofabout 10 weight percent to about 20 weight %, and a viscosity less thanabout 0.5 cP. In another embodiment, the mixture may includehydrofluoric acid having a first concentration of about 15 weight % toabout 25 weight % and nitric acid having a second concentration of about10 weight % to about 20 weight %, and a viscosity of less than 0.4 cP.

In another embodiment, a leaching agent having an unexpectedly rapid andeffective removal of the at least one interstitial constituent from thePCD table 108 may include a mixture of hydrofluoric acid or nitric acidin a first concentration, and a viscosity less than about 0.4 cP. Forexample, the mixture may include hydrofluoric acid having a firstconcentration greater than about 25 weight %. In another embodiment, themixture may include nitric acid having a first concentration less thanabout 25 weight %. In another embodiment, the mixture may include nitricacid having a first concentration less than about 25 weight % and atleast one additional acid in a second concentration greater than 0weight %. In another embodiment, the mixture may include a firstconcentration of nitric acid less than about 20 weight %.

In another embodiment, a leaching agent having an unexpectedly rapid andeffective removal of the at least one interstitial constituent from thePCD table 108 may include a mixture having hydrofluoric acid in a firstconcentration greater than 0 weight %, nitric acid in a secondconcentration less than about 15 weight %, and a viscosity less thanabout 0.5 cP. In another embodiment, the mixture may includehydrofluoric acid in a first concentration greater than 0 weight %,nitric acid in a second concentration less than about 15 weight %, and aviscosity less than about 0.5 cP at a temperature greater than about 75°C.

Referring back to FIG. 1B, after the HPHT process, the PCD table 108 maybe leached using a leaching agent including any of the mixturesdisclosed herein to remove at least a portion of the interstitialconstituent (e.g., a catalyst or an infiltrant) to a selected depth “d”measured from one or more of the upper surface 112, the chamfer 116, orthe at least one lateral surface 114. In an embodiment, the PDC 100 maybe positioned in a protective leaching cup 118. The protective leachingcup 118 may be configured to receive the PDC 100. The protectiveleaching cup 118 may include a seal contact portion 120 configured tocontact and form a seal against the PDC 100. The seal contact portion120 may contact one or more portions of at least one lateral surface 114of the PDC when the PDC 100 is at least partially positioned within theprotective leaching cup 118. The seal contact portion 120 may bepartially or fully impermeable to various fluids, such as the leachingagent. As such, the protective leaching cup 118 may limit or prevent theleaching agent from substantially chemically damaging certain portionsof the PDC 100, for example, the substrate 106 and/or a selected portionof the PCD table 108 during the leaching process. In the illustratedembodiment, only the upper surface 112, the chamfer 116 and a portion ofthe at least one lateral surface 114 are exposed to the leaching agent.The protective leaching cup 118 may be at least partially formed frompolyethylene (e.g., linear low density polyethylene), polypropylene,chlorosulfonated polyethylene, chlorinated polyethylene, fluoropolymer,perfluoroalkoxy, Kynar®, Viton®, another suitable polymer, orcombinations thereof. Examples of protective leaching cups that may beused in any of the leaching methods disclosed herein are disclosed inU.S. patent application Ser. No. 14/084,058, the disclosure of which isincorporated herein, in its entirety, by this reference.

In an embodiment, the PDC 100 positioned in the protective leaching cup118 may be placed in an extraction vessel 122, and a flow of a leachingagent 124 including any of the mixtures discussed herein may be providedvia one or more entry valves 126 into an interior chamber 128 of theextraction vessel 122. However, in other embodiments, the leaching agent124 may not be flowed over the PDC 100 and may be generally stagnant.The extraction vessel 122 containing the PDC 100 positioned in theprotective leaching cup 118 and the leaching agent 124 may besubsequently heated and/or pressurized (e.g., via a pump and/or heatingelement that is not shown) sufficiently to at least partially remove theat least one interstitial constituent the PCD table 108, thereby formingthe at least partially leached PCD table 136, as shown in FIG. 1C. Theleaching agent 124 may be removed from the extraction vessel via an exitvalve 130. While the extraction vessel 122 described herein is shownwith the entry valve 126 and/or exit valve 130 (e.g., the leaching agent124 may flow through the vessel or may be re-filled or recharged asneeded), it is understood that the extraction vessel 122 may not includethe entry valve 126 and/or exit valve 130 (e.g., the leaching agent 124may be introduced and/or removed from the vessel in any suitable manner,without limitation) or may be any suitable extraction vessel, container,or system.

The extraction vessel 122 and the leaching agent 124 may exhibit atemperature that facilitates removal of the at least one interstitialconstituent of the PCD table 108. Increasing the temperature of theextraction vessel 122 and the leaching agent 124 during the leachingprocess may improve the diffusion of the leaching agent into and fromthe interstitial regions of the PCD table 108. However, the temperatureof the extraction vessel 122 and the leaching agent 124 may be limitedbased on the composition of the leaching agent and the limits of theextraction vessel 122 and/or leaching cup or masking material. In anembodiment, the temperature of the leaching agent 124 in the extractionvessel 122 may be less than about 120° C., such as about 10° C. to about50° C. or about 50° C. to about 100° C. For example, the leaching agent124 may exhibit a temperature of about 75° C. during the leachingprocess. In another embodiment, the leaching agent 124 may exhibit atemperature during the leaching process greater than about 25° C., suchas greater than about 50° C., greater than about 75° C., or greater thanabout 120° C.

The extraction vessel 122 and the leaching agent 124 may exhibit apressure that facilitates removal of the at least one interstitialconstituent from at least a portion of the PCD table 108. In anembodiment, the extraction vessel 122 and the leaching agent 124 mayexhibit a pressure of about 1 atmosphere or greater, such as about 1atmosphere to 100 atmosphere. Alternatively, the extraction vessel 122may exhibit a pressure less than about 1 atmosphere.

The PCD table 108 may be leached for a few hours to a few months (e.g.,more than 1000 hours). In an embodiment, the PCD table 108 may beleached for less than one day, less than about 50 hours, or less thanone week. In another embodiment, the PCD table may be leached for morethan about 100 hours, such as about 120 hours to about 160 hours, orabout 112 hours to about 150 hours. The duration and conditions of theleaching process may be determined by a variety of factors including thecomposition of the mixture of the leaching agent 124 used, thetemperature of the leaching agent 124, pressure inside the extractionvessel 122, the at least one interstitial constituent to be removed fromthe PCD table 108, the pore size of the PCD table 108, a desired leachdepth, the percentage of the at least one interstitial constituent to beremoved from the leached portion of the PCD table 108, or combinationsthereof. In various embodiments, the leach depth may be about 50 μm toabout 800 μm or greater than about 800 μm. For example, the leach depthmay be about 50 μm to about 300 μm, about 300 μm to about 500 μm, about500 μm to about 800 μm, 300 μm to about 600 μm, or about 400 μm to about500 μm. The leach depth and the amount of the at least one interstitialconstituent removed from the PCD table 108 may be selected based on theintended use of the PDC 100.

Referring to FIG. 1C, after the leaching process, the at least partiallyleached PCD table 136 may have the at least one interstitial constituentremoved to a selected depth “d” measured from one or more of the uppersurface 112, the chamfer 116, or a portion of the at least one lateralsurface 114 to an intermediate location to form a leached region 132.Similarly, the at least partially leached PCD table 136 may include anun-leached region 134 that extends from the substrate 106 to theintermediate location. In an embodiment, the leached region 132 maygenerally contour the upper surface 112, the chamfer 116, and the atleast one lateral surface 114. The leached region 132 may extend along aselected length of the at least one lateral surface 114. In anembodiment, a residual amount of the at least one interstitialconstituent may be present in the leached region 132 even afterleaching. For example, the at least one interstitial constituent maycomprise about 0.8 weight % to about 1.50 weight % and, moreparticularly, about 0.9 weight % to about 1.2 weight % of the leachedregion 132.

Other leach depth profiles may be formed rather than the leach depthprofile shown in FIG. 1C by appropriately masking the PCD table 108 orappropriately using the protective leaching cups 118. Examples ofdifferent leach depth profiles including non-uniform leach depthprofiles that may be achieved by the methods, compositions, and/orsystems disclosed herein are disclosed in U.S. Pat. No. 8,596,387, whichis incorporated herein, in its entirety, by this reference.

FIGS. 2A-2D are cross-sectional views illustrating different stages in amethod of fabricating a PDC 242 according to an embodiment that includesforming a PCD table 208 from a mass of diamond particles and a catalystin a first HPHT process. The sintered PCD table 208 is at leastpartially leached to remove at least one interstitial constituenttherefrom by exposing the formed PCD table 208 to a leaching agentincluding any of the mixtures included herein. A PDC 242 may be formedby bonding the at least partially leached PCD table 236 to a substrate240 in a second HPHT process. Such a method may provide for moreeffective leaching of the interstitial material from the PCD table208/244 before and/or after bonding to the substrate 240.

Referring to FIG. 2A, a PDC 200 may be provided that includes a PCDtable 208 bonded to a substrate 206. The PDC 200 may be made in the samemanner as the PDC 100 shown in FIG. 1A. For example, the PDC 200 may beformed by placing a mass of diamond particles adjacent to a substrate toform an assembly. The assembly may be placed in a pressure transmittingmedium and subjected to a first HPHT process similar to the HPHT processdescribed in FIG. 1A. As such, the PCD table 208 may include a pluralityof diamond particles bonded together defining a plurality ofinterstitial region. The plurality of interstitial regions may be atleast partially occupied by at least one interstitial constituent. ThePCD table 208 may be separated from the substrate 206 using a lappingprocess, a grinding process, wire-electrical-discharge machining,combinations thereof, or another suitable material removal process.

Alternatively, the PCD table 208 may be formed without a substrate. Inan embodiment, a mass of diamond particles including a catalyst materialmixed therein may be positioned in a pressure transmitting medium andsubjected to a first HPHT process. The catalyst mixed therein mayfacilitate intergrowth between the mass of diamond particles and formthe PCD table 208 including directly bonded-together diamond grainsdefining a plurality of interstitial regions with the catalyst disposedwithin at least a portion of the plurality of interstitial regions. Inanother embodiment, a mass of diamond particles may be positionedadjacent to a catalyst material source (e.g., a disk or acobalt-cemented tungsten carbide substrate) to form an assembly. Theassembly may be placed in a pressure transmitting medium and subjectedto a first HPHT process. Further, the catalyst may liquefy andinfiltrate the mass of diamond particles during the HPHT process therebyfacilitating intergrowth between the mass of diamond particles to formthe PCD table 208 including bonded diamond grains having a plurality ofinterstitial regions at least partially occupied by the catalyst. Inthis embodiment, the PCD table 208 may be separated from the catalystmaterial source using a lapping process, a grinding process,wire-electrical-discharge machining, a leaching process, combinationsthereof, or another suitable material removal process.

Referring now to FIG. 2B, the at least one interstitial constituent maybe removed from the PCD table 208 using a leaching agent 224 thatincludes any of the mixtures described herein. In an embodiment, the PCDtable 208 may be enclosed in an extraction vessel 222 containing aleaching agent 224 to remove at least a portion of the at least oneinterstitial constituent thereby forming an at least partially leachedPCD table 236. The leaching agent 224 may be heated and may bepressurized using the same or similar conditions described with respectto FIG. 1B. In an embodiment, the PCD table 208 may be positioned in theextraction vessel 222 and leached for a time sufficient to remove atleast a portion of the at least one interstitial constituent fromsubstantially the entire PCD table 208. In another embodiment, the PCDtable 208 may be positioned in the extraction vessel 222 for a timesufficient to remove at least a portion of the at least one interstitialconstituent from a select region or depth measured from each surface ofthe PCD table 208. In another embodiment, a portion of the PCD table 208may be masked (e.g., using electrodeposition or plasma deposition of amasking material on the PDC 200) or the PCD table 208 may be positionedin a protective leaching cup prior to being leached.

FIG. 2C illustrates a cross-sectional view of an assembly 238 includingthe at least partially leached PCD table 236 positioned adjacent to asubstrate 240. In an embodiment, the substrate 240 may be made from thesame materials as the substrate 106 discussed above. The at leastpartially leached PCD table 236 may include a plurality of interstitialregions that were previously occupied by the at least one interstitialconstituent and form a network of at least partially interconnectedpores.

Referring to FIG. 2C, the assembly 238, including the at least partiallyleached PCD table 236 and the substrate 240, may be placed in a pressuretransmitting medium. The pressure transmitting medium, including theassembly 238, may be subjected to a second HPHT process. The second HPHTprocess conditions may be similar to or the same as the HPHT processconditions described in FIG. 1A. The second HPHT process bonds the atleast partially leached PCD table 236 to the substrate 240 and may causeat least one infiltrant from the substrate 240 (e.g., cobalt, nickel,iron, alloys thereof, or another cementing constituent) or from anothersource to at least partially infiltrate the at least partially leachedPCD table 236. Referring to FIG. 2D, the PDC 242 so-formed includes aninfiltrated PCD table 244 in which the interstitial regions thereof areat least partially occupied by the at least one infiltrant from thesubstrate 240 or from another source.

In some embodiments, the formed PDC 242 may be subjected to a number ofdifferent shaping operations. For example, an upper working surface 212may be planarized and/or polished. Additionally, aperipherally-extending chamfer 216 may be formed that extends betweenthe upper working surface 212 and at least one lateral surface 214 ofthe infiltrated PCD table 244. The shaping operations may includelapping, grinding, wire EDM, combinations thereof, or another suitablematerial-removal process. Alternatively, the PCD table 208 may besubjected to the shaping operations prior to leaching the PCD table 208.

In an embodiment, the infiltrated PCD table 244 of the PDC 242 may beleached using a leaching agent including any of the mixtures disclosedherein to remove at least a portion of the at least one infiltrant fromthe infiltrated PCD table 244. For example, the at least one infiltrantmay be removed from the infiltrated PCD table 244 from one or moreexterior surfaces thereof using a method similar to or the same as theleaching process described with respect FIG. 1B to form a leached regionin the PCD table thereof similar to or the same as the leached region132 shown in FIG. 1B. In an embodiment, the infiltrated PCD table 244 ofthe PDC 242 may be positioned at least partially into any of theprotective leaching cups disclosed herein. The PDC 242 may be positionedin the protective leaching cup and placed in an extraction vesselcontaining any of the leaching agents comprising any of the mixturesdisclosed herein. The infiltrated PCD table 244 may have the at leastone infiltrant removed to a selected depth “d” measure from one or moreof the upper surface 212, the chamfer 216, or the at least one lateralsurface 214. Similar to the at least partially leached PCD table 136shown in FIG. 1C, removing the at least one infiltrant from theinfiltrated PCD table 244 may form a porous leached region that isdepleted of the at least one infiltrant, with a non-porous regionlocated between the porous leached region and the substrate. Forexample, the porous leached region may generally contour the uppersurface 212, the chamfer 216, and/or at least a portion of the at leastone lateral surface 214. In an embodiment, a residual amount of the atleast one infiltrant may be present in the porous leached region evenafter the leaching process in a residual amount, such as about 0.8weight % to about 1.50 weight % and, more particularly, about 0.9 weight% to about 1.2 weight % of the leached region.

For ease of reference, the following description refers to the PCD table208 and an at least partially leached diamond table 236 that may beformed from the PCD table 208. However, it is understood that in thefollowing description, any of the PCD tables disclosed herein can beused instead of the PCD table 208 and the at least partially leacheddiamond table 236. Referring to FIG. 3A, in an embodiment, an at leastpartially leached PCD table 236 may include leaching by-products as aresult of the leaching process used to remove at least one interstitialconstituent from the PCD table 208 (FIGS. 2A and 2B). For example, aleaching agent used to remove the at least one interstitial constituentmay leave one or more types of residual salts, one or more types ofoxides, combinations of the foregoing, or another leaching by-productwithin at least some of the interstitial regions of the at leastpartially leached PCD table 236. In an embodiment where the at leastpartially leached PCD table 236 was formed using a cobalt-cementedtungsten carbide substrate and was leached using a leaching agentincluding any of the mixtures disclosed herein, the residual salt may bea salt of nitric acid or hydrochloric acid such as cobalt nitrate orcobalt chloride. The leaching by-products may also include a metaloxide, such as an oxide of tungsten or cobalt. It is currently believedthat leaching by-products may block, obstruct, or otherwise inhibitinfiltration of the at least partially leached PCD table 236 with atleast one infiltrant when the at least partially leached PCD table 236is bonded to the substrate 240 (FIGS. 2C and 2D). Additionally, leachingby-products may inhibit back filling with a non-catalyst material suchas silicon.

At least some of the leaching by-products may be removed from the atleast partially leached PCD table 236. For example, as shown in FIG. 3B,at least some of the leaching by-products may be removed by subjectingthe at least partially leached PCD table 236 to a thermal-cleaningprocess. In such a thermal-cleaning process, the at least partiallyleached PCD table 236 may be heated under partial vacuum (e.g., at apressure less than ambient atmospheric pressure) or ambient pressure toa temperature sufficient to sublimate at least some of the leachingby-products present in the at least partially leached PCD table 236, butbelow a temperature at which the diamond grains of the at leastpartially leached PCD table 236 may significantly degrade. For example,the at least partially leached PCD table 236 may be heated in a vacuumfurnace at a temperature at about 500° C. or greater and/or about 700°C. or less for about 0.5 hours to about 2.0 hours or more. In anembodiment, the at least partially leached PCD table 236 may be heatedin a vacuum furnace at a temperature of about 650° C. for about 1 hourto about 1.5 hours.

In another embodiment, the at least partially leached PCD table 236 maybe cleaned using an autoclave under diamond-stable conditions in whichheat and pressure is applied at a temperature and pressure sufficient tosublimate at least some of the leaching by-products present in the atleast partially leached PCD table 236. Suitable elevated temperaturelevels used in the autoclave process may range from approximately theboiling point of the leaching agent and/or the leaching by-products tothree times the boiling point of the leaching agent and/or the leachingby-products. For example, in an embodiment, the elevated temperature ofthe autoclave process may be about 90° C. to about 350° C., such asabout 175° C. to about 225° C. In other embodiments, the elevatedtemperature may be up to about 300° C. The pressure of the autoclaveprocess may be selected so that diamond-stable or non-stable conditionsare used, such as a pressure of about 0.5 MPa to about 3 GPa (e.g.,about 1 GPa to about 2 GPa).

In another embodiment, at least some of the leaching by-products may beremoved from the at least partially leached PCD table 236 using achemical cleaning process. For example, the at least partially leachedPCD table 236 may be immersed in hydrofluoric acid. The concentration ofthe hydrofluoric acid and the immersion time of the at least partiallyleached PCD table 236 in the hydrofluoric acid may be selected so thatat least some of the leaching by-products and, in some embodiments,substantially all of the leaching by-products may be removed from the atleast partially leached PCD table 236. In other embodiments, nitricacid, sulfuric acid, hydrochloric acid, hydrogen peroxide, phosphoricacid, perchloric acid, any combination of foregoing acids, or the like,may be selected in place of hydrofluoric acid as a chemical cleaningagent.

Additional details about techniques for cleaning the at least partiallyleached PCD table 236 that may be used in combination with any of theleaching techniques disclosed herein may be found in U.S. Pat. No.7,845,438. U.S. Pat. No. 7,845,438 is incorporated herein, in itsentirety, by this reference.

The following working examples provide further detail in connection withthe specific embodiments described above.

Working Example 1

A PDC was fabricated according to the following method. A mass ofdiamond particles was placed adjacent to a cobalt-cemented tungstencarbide substrate. The mass of diamond particles included a plurality ofdiamond particles exhibiting an average particle size of about 29 μm.The mass of diamond particles and the substrate were positioned within apyrophyllite cube, and subjected to an HPHT process at a temperature ofabout 1400° C. and a cell pressure of at least about 7 GPa to sinter themass of diamond particles to form a PCD table and attach the resultingPCD table to the substrate.

The PDC was placed in a protective leaching cup and exposed to aleaching agent. The leaching agent included a mixture havinghydrofluoric acid in a first concentration of about 15 weight %, nitricacid in a second concentration of about 22 weight %, and water in athird concentration of about 63 weight %. The leaching agent was heatedto about 75° C. Exposing the PDC to the leaching agent for about 72hours yielded an average leach depth of about 296 μm in the PCD table.Exposing the PDC to the leaching agent for about 144 hours yielded anaverage leach depth of about 393 μm in the PCD table.

Working Example 2

A PDC is fabricated using the same method described in WorkingExample 1. The resulting PDC was placed in a protective leaching cup andexposed to a leaching agent. The leaching agent included a mixturehaving hydrofluoric acid in a first concentration of about 15 weight %,nitric acid in a second concentration of about 18 weight %, and water ina third concentration of about 67 weight %. The leaching agent washeated to about 75° C. Exposing the PDC to the leaching agent for about72 hours yielded an average leach depth of about 208 μm in the PCDtable. Exposing the PDC to the leaching agent for about 144 hoursyielded an average leach depth of about 390 μm in the PCD table.

Working Example 3

A PDC is fabricated using the same method described in WorkingExample 1. The resulting PDC was placed in a protective leaching cup andexposed to a leaching agent. The leaching agent included a mixturehaving hydrofluoric acid in a first concentration of about 15 weight %,nitric acid in a second concentration of about 14 weight % and water ina third concentration of about 71 weight %. The leaching agent washeated to about 75° C. Exposing the PDC to the leaching agent for about72 hours yielded an average leach depth of about 343 μm in the PCDtable. Exposing the PDC to the leaching agent for about 144 hoursyielded an average leach depth of about 396 μm in the PCD table.

Working Example 4

A PDC is fabricated using the same method described in WorkingExample 1. The resulting PDC was placed in a protective leaching cup andexposed to a leaching agent. The leaching agent included a mixturehaving hydrofluoric acid in a first concentration of about 27 weight %,nitric acid in a second concentration of about 17 weight % and water ina third concentration of about 56 weight %. The leaching agent washeated to about 75° C. Exposing the PDC to the leaching agent for about72 hours yielded an average leach depth of about 326 μm in the PCDtable. Exposing the PDC to the leaching agent for about 144 hoursyielded an average leach depth of about 439 μm in the PCD table.

Working Example 5

A PDC is fabricated using the same method described in WorkingExample 1. The resulting PDC was placed in a protective leaching cup andexposed to a leaching agent. The leaching agent included a mixturehaving hydrofluoric acid in a first concentration of about 37 weight %,nitric acid in a second concentration of about 16 weight % and water ina third concentration of about 47 weight %. The leaching agent washeated to about 75° C. Exposing the PDC to the leaching agent for about72 hours yielded an average leach depth of about 285 μm in the PCDtable. Exposing the PDC to the leaching agent for about 144 hoursyielded an average leach depth of about 414 μm in the PCD table.

Working Example 6

A PDC is fabricated using the same method described in WorkingExample 1. The resulting PDC was placed in a protective leaching cup andexposed to a leaching agent. The leaching agent included a mixturehaving hydrofluoric acid in a first concentration of about 14 weight %,nitric acid in a second concentration of about 14 weight % and water ina third concentration of about 72 weight %. The leaching agent washeated to about 75° C. and the PDC remained exposed to the leachingagent for about 144 hours. After leaching, the average leach depth ofthe PCD table was measured to be about 429 μm.

Working Example 7

A PDC is fabricated using the same method described in WorkingExample 1. The resulting PDC was placed in a protective leaching cup andexposed to a leaching agent. The leaching agent included a mixturehaving hydrofluoric acid in a first concentration of about 14 weight %,nitric acid in a second concentration of about 11 weight % and water ina third concentration of about 75 weight %. The leaching agent washeated to about 75° C. and the PDC remained exposed to the leachingagent for about 144 hours. After leaching, the average leach depth ofthe PCD table was measured to be about 392 μm.

Working Example 8

A PDC is fabricated using the same method described in WorkingExample 1. The resulting PDC was placed in a protective leaching cup andexposed to a leaching agent. The leaching agent included a mixturehaving hydrofluoric acid in a first concentration of about 14 weight %,nitric acid in a second concentration of about 7 weight % and water in athird concentration of about 79 weight %. The leaching agent was heatedto about 75° C. and the PDC remained exposed to the leaching agent forabout 144 hours. After leaching, the average leach depth of the PCDtable was measured to be about 362 μm.

Working Example 9

A PDC is fabricated using the same method described in WorkingExample 1. The resulting PDC was placed in a protective leaching cup andexposed to a leaching agent. The leaching agent included a mixturehaving hydrofluoric acid in a first concentration of about 26 weight %,nitric acid in a second concentration of about 14 weight % and water ina third concentration of about 60 weight %. The leaching agent washeated to about 75° C. and the PDC remained exposed to the leachingagent for about 144 hours. After leaching, the average leach depth ofthe PCD table was measured to be about 426 μm.

Working Example 10

A PDC is fabricated using the same method described in WorkingExample 1. The resulting PDC was placed in a protective leaching cup andexposed to a leaching agent. The leaching agent included a mixturehaving hydrofluoric acid in a first concentration of about 38 weight %,nitric acid in a second concentration of about 14 weight % and water ina third concentration of about 48 weight %. The leaching agent washeated to about 75° C. and the PDC remained exposed to the leachingagent for about 144 hours. After leaching, the average leach depth ofthe PCD table was measured to be about 391 μm.

Working Example 11

A PDC is fabricated using the same method described in WorkingExample 1. The resulting PDC was placed in a protective leaching cup andexposed to a leaching agent. The leaching agent included a mixturehaving hydrofluoric acid in a first concentration of about 26 weight %,nitric acid in a second concentration of about 11 weight % and water ina third concentration of about 63 weight %. The leaching agent washeated to about 75° C. and the PDC remained exposed to the leachingagent for about 144 hours. After leaching, the average leach depth ofthe PCD table was measured to be about 416 μm.

Working Example 12

A PDC is fabricated using the same method described in WorkingExample 1. The resulting PDC was placed in a protective leaching cup andexposed to a leaching agent. The leaching agent included a mixturehaving hydrofluoric acid in a first concentration of about 26 weight %,nitric acid in a second concentration of about 11 weight % and water ina third concentration of about 63 weight %. The leaching agent washeated to about 90° C. and the PDC was exposed to the leaching agent forabout 144 hours. After leaching, the average leach depth of the PCDtable was measured to be about 469 μm.

Working Example 13

A PDC is fabricated using the same method described in WorkingExample 1. The resulting PDC was placed in a protective leaching cup andexposed to a leaching agent. The leaching agent included a mixturehaving hydrofluoric acid in a first concentration of about 16 weight %,nitric acid in a second concentration of about 23 weight % and water ina third concentration of about 61 weight %. The leaching agent washeated to about 75° C. and the PDC remained exposed to the leachingagent for about 144 hours. After leaching, the average leach depth ofthe PCD table was measured to be about 385 μm.

FIG. 4 is an isometric view and FIG. 5 is a top elevation view of arotary drill bit 400 according to an embodiment. The rotary drill bit400 includes at least one PDC fabricated according to any of theembodiments disclosed herein. The rotary drill bit 400 comprises a bitbody 402 that includes radially and longitudinally extending blades 404with leading faces 406, and a threaded pin connection 408 for connectingthe bit body 402 to a drilling string. The bit body 402 defines aleading end structure configured for drilling into a subterraneanformation by rotation about a longitudinal axis 410 and application ofweight-on-bit. At least one PDC cutting element 412, manufactured andconfigured according to any of the previously described PDC embodiments(e.g., the PDC 100 shown in FIG. 1C or the PDC 242 shown in FIG. 2Dafter being leached to remove at least one infiltrant therefrom), may beaffixed to rotary drill bit 400 by, for example, brazing, mechanicalaffixing, or another suitable technique. Each PDC 412 is secured to theblades 404. For example, each PDC 412 may include a PCD table 414 bondedto a substrate 416. More generally, the PDCs 412 may comprise any PDCdisclosed herein, without limitation. In addition, if desired, in anembodiment, a number of the PDCs 412 may be conventional inconstruction. Also, circumferentially adjacent blades 404 defineso-called junk slots 418 therebetween, as known in the art.Additionally, the rotary drill bit 400 includes a plurality of nozzlecavities 420 for communicating drilling fluid from the interior of therotary drill bit 400 to the PDCs 412.

FIGS. 4 and 5 merely depict one embodiment of a rotary drill bit thatemploys at least one cutting element comprising a PDC fabricated andstructured in accordance with the disclosed embodiments, withoutlimitation. The rotary drill bit 400 is used to represent any number ofearth-boring tools or drilling tools, including, for example, core bits,roller-cone bits, fixed-cutter bits, eccentric bits, bicenter bits,reamers, reamer wings, mining rotary drill bits, or any other downholetool including PDCs, without limitation.

The PDCs disclosed herein may also be utilized in applications otherthan rotary drill bits. For example, the disclosed PDC embodiments maybe used in thrust-bearing assemblies, radial bearing assemblies,wire-drawing dies, artificial joints, machining elements, PCD windows,and heat sinks.

FIG. 6 is an isometric cut-away view of a thrust-bearing apparatus 600according to an embodiment, which may utilize any of the PDCs fabricatedaccording to any of the embodiments disclosed herein. The thrust-bearingapparatus 600 includes respective thrust-bearing assemblies 602. Eachthrust-bearing assembly 602 includes an annular support ring 604 thatmay be fabricated from a material, such as carbon steel, stainlesssteel, or another suitable material. Each support ring 604 includes aplurality of recesses (not labeled) that receives a correspondingbearing element 606. Each bearing element 606 may be mounted to acorresponding support ring 604 within a corresponding recess by brazing,press-fitting, using fasteners, combinations thereof, or anothersuitable mounting technique. One or more, or all of bearing elements 606may be manufactured and configured according to any of the disclosed PDCembodiments. For example, each bearing element 606 may include asubstrate 608 and a PCD table 610, with the PCD table 610 including abearing surface 612.

In use, the bearing surfaces 612 of one of the thrust-bearing assemblies602 bears against the opposing bearing surfaces 612 of the other one ofthe bearing assemblies 602. For example, one of the thrust-bearingassemblies 602 may be operably coupled to a shaft to rotate therewithand may be termed a “rotor.” The other one of the thrust-bearingassemblies 602 may be held stationary and may be termed a “stator.”

FIG. 7 is an isometric cut-away view of a radial bearing apparatus 700according to an embodiment, which may utilize any of the PDCs fabricatedaccording to any of the embodiments disclosed herein. The radial bearingapparatus 700 includes an inner race 702 positioned generally within anouter race 704. The outer race 704 includes a plurality of bearingelements 706 affixed thereto that have respective bearing surfaces 708.The inner race 702 also includes a plurality of bearing elements 710affixed thereto that have respective bearing surfaces 712. One or more,or all of the bearing elements 706 and 710 may be configured accordingto any of the PDC embodiments disclosed herein. The inner race 702 ispositioned generally within the outer race 704, with the inner race 702and outer race 704 configured so that the bearing surfaces 708 and 712may at least partially contact one another and move relative to eachother as the inner race 702 and outer race 704 rotate relative to eachother during use.

While various aspects and embodiments have been disclosed herein, otheraspects and embodiments are contemplated. The various aspects andembodiments disclosed herein are for purposes of illustration and arenot intended to be limiting. Additionally, the words “including,”“having,” and variants thereof (e.g., “includes” and “has”) as usedherein, including the claims, shall be open ended and have the samemeaning as the word “comprising” and variants thereof (e.g., “comprise”and “comprises”).

What is claimed is:
 1. A polycrystalline diamond body produced by aprocess comprising: providing a polycrystalline diamond body includingbonded diamond grains defining interstitial regions comprising at leastone interstitial constituent disposed in the interstitial regions; atleast partially leaching the polycrystalline diamond body with aleaching agent comprising a mixture having: a ratio of weight %hydrofluoric acid to weight % nitric acid of about 1.0 to about 2.4; andwater in a concentration of about 50 weight % to about 85 weight %;producing an at least partially leached polycrystalline diamond body byremoving at least a portion of the at least one interstitial constituentfrom the polycrystalline diamond body; and producing the at leastpartially leached polycrystalline diamond body such that a portion ofthe leaching agent and/or a byproduct of the leaching agent remainswithin the at least partially leached polycrystalline diamond body. 2.The polycrystalline diamond body of claim 1, the process furthercomprising removing substantially all of the at least one interstitialconstituent from the polycrystalline diamond body.
 3. Thepolycrystalline diamond body of claim 1, wherein providing apolycrystalline diamond body including bonded diamond grains comprisesproviding a polycrystalline diamond compact including a polycrystallinediamond table bonded to a substrate.
 4. The polycrystalline diamond bodyof claim 1, the process further comprising selecting the mixture of theleaching agent to result in the portion of the leaching agent and/or thebyproduct of leaching agent comprising a residual salt of nitric acid orhydrochloric acid or a residual oxide comprising a metal oxide.
 5. Thepolycrystalline diamond body of claim 1, the process further comprisingselecting the mixture to comprise the hydrofluoric acid in aconcentration of greater than about 15 weight % and the nitric acid in aconcentration of less than about 20 weight %.
 6. The polycrystallinediamond body of claim 1, the process further comprising selecting themixture to comprise the hydrofluoric acid in a concentration of about 15weight % to about 25 weight % and the nitric acid in a concentration ofabout 10 weight % to about 20 weight %.
 7. The polycrystalline diamondbody of claim 1, the process further comprising selecting the mixture toexhibit a viscosity of less than about 0.55 centipoise.
 8. Apolycrystalline diamond compact produced by a process comprising: atleast partially leaching, with a leaching agent, a polycrystallinediamond table comprising bonded diamond grains and interstitial regionsto remove at least a portion of at least one interstitial constituentfrom at least some of the interstitial regions; wherein, during the atleast partially leaching, at least a portion of the diamond table issealed from the leaching agent; and selecting the leaching agent toinclude a mixture comprising a ratio of weight % hydrofluoric acid toweight % nitric acid of about 1.0 to about 2.4 and water in aconcentration of about 50 weight % to about 85 weight %, wherein aportion of the leaching agent remains within the at least partiallyleached polycrystalline diamond table.
 9. The polycrystalline diamondcompact of claim 8, the process further comprising selecting the mixtureto comprise the hydrofluoric acid in a concentration of about 25 weight% to about 30 weight %, the nitric acid in a concentration of about 10weight % to about 15 weight %, and the water in a concentration of about55 weight % to about 65 weight %.
 10. The polycrystalline diamondcompact of claim 8, the process further comprising selecting the mixtureto comprise the hydrofluoric acid in a concentration of greater thanabout 15 weight % and the nitric acid in a concentration of less thanabout 20 weight %.
 11. The polycrystalline diamond compact of claim 10,the process further comprising selecting the mixture to exhibit aviscosity of less than about 0.5 centipoise.
 12. The polycrystallinediamond compact of claim 8, the process further comprising selecting themixture to comprise the hydrofluoric acid in a concentration of about 15weight % to about 25 weight % and the nitric acid in a concentration ofabout 10 weight % to about 20 weight %.
 13. The polycrystalline diamondcompact of claim 12, the process further comprising selecting themixture to exhibit a viscosity of less than about 0.4 centipoise. 14.The polycrystalline diamond compact of claim 8, the process furthercomprising reducing a viscosity of the mixture prior to the leaching.15. The polycrystalline diamond compact of claim 8, the process furthercomprising heating the leaching agent during the at least partiallyleaching.
 16. The polycrystalline diamond compact of claim 15, theprocess further comprising selecting the mixture to exhibit a viscosityof less than about 0.5 centipoise.
 17. A polycrystalline diamond compactproduced by a process comprising: leaching a polycrystalline diamondtable bonded to a substrate with a leaching agent to remove at least aportion of at least one interstitial constituent disposed ininterstitial regions defined in bonded diamond grains of thepolycrystalline diamond table; and selecting the leaching agent toinclude a mixture having a ratio of weight % hydrofluoric acid to weight% nitric acid of about 1.0 to about 2.4, the mixture exhibiting aviscosity of less than about 0.55 centipoise, wherein the leaching agentfrom the leaching of the polycrystalline diamond table leaves at leastone of a residual salt or a residual oxide in the polycrystallinediamond table.
 18. The polycrystalline diamond compact of claim 17, theprocess further comprising supplying the leaching agent to thepolycrystalline diamond table at a temperature greater than about 25° C.19. The polycrystalline diamond compact of claim 18, the process furthercomprising supplying the leaching agent to the polycrystalline diamondtable leached for more than about 100 hours.
 20. The polycrystallinediamond compact of claim 17, the process further comprising selectingthe mixture of the leaching agent to result in the residual saltcomprising a salt of nitric acid or hydrochloric acid or the residualoxide comprising a metal oxide.